NSS40200UW6T1G - onsemi

Manufacturer Part Number

NSS40200UW6T1G

Manufacturer

onsemi

Introduction

High-power PNP bipolar junction transistor (BJT) for power amplification and switching applications.

Product Features and Performance

Wide operating temperature range of -55°C to 150°C

High collector current rating of 2A

High power rating of 875mW

High collector-emitter breakdown voltage of 40V

High current gain of 150 (minimum) at 1A collector current

Product Advantages

Suitable for a wide range of power amplification and switching applications

Robust design with high power and voltage handling capabilities

Efficient heat dissipation through exposed pad package

Key Technical Parameters

Collector-Emitter Breakdown Voltage (VCEO): 40V

Collector Current (IC): 2A

Power Dissipation: 875mW

Transition Frequency (fT): 140MHz

Collector-Emitter Saturation Voltage (VCE(sat)): 300mV @ 20mA, 2A

Quality and Safety Features

RoHS3 compliant

Suitable for reflow soldering

Compatibility

Surface mount package (6-WDFN 2x2)

Compatible with standard PCB assembly processes

Application Areas

Power amplifiers

Switch-mode power supplies

Motor control circuits

Industrial and consumer electronics

Product Lifecycle

Current product offering, no information on discontinuation or replacement

Key Reasons to Choose This Product

High power and voltage handling capabilities

Efficient heat dissipation through exposed pad package

Wide operating temperature range

Robust and reliable design

Compatibility with standard PCB assembly processes