NSS35200CF8T1G - Sanyo

Manufacturer Part Number

NSS35200CF8T1G

Manufacturer

onsemi

Introduction

The NSS35200CF8T1G is a high-performance PNP bipolar junction transistor (BJT) from onsemi, designed for use in a variety of electronic applications.

Product Features and Performance

High current handling capability of up to 2A

Wide operating temperature range of -55°C to 150°C

High DC current gain (hFE) of 100 or more

High transition frequency of 100MHz

Low collector-emitter saturation voltage of 300mV @ 20mA, 2A

Product Advantages

Excellent thermal management for high-power applications

Robust design for reliable operation

Compact surface-mount package for efficient board space utilization

Suitable for high-frequency switching and amplification circuits

Key Technical Parameters

Collector-Emitter Breakdown Voltage (VCEO): 35V

Collector Cutoff Current (ICBO): 100nA

Power Dissipation (Pd): 635mW

Quality and Safety Features

RoHS-compliant and lead-free construction

Meets relevant industry standards for quality and reliability

Compatibility

The NSS35200CF8T1G is compatible with a wide range of electronic circuits and systems that require a high-performance PNP bipolar transistor.

Application Areas

Power amplifiers

Switch-mode power supplies

Motor control circuits

Audio and radio frequency (RF) circuits

Product Lifecycle

The NSS35200CF8T1G is an active product, and onsemi continues to provide support and availability for this device. There are no known plans for discontinuation or replacement at this time.

Key Reasons to Choose This Product

High current and power handling capability

Excellent high-frequency performance

Reliable and robust design for demanding applications

Compact surface-mount package for efficient board layout

Proven track record and support from a reputable manufacturer (onsemi)