NSS35200MR6T1G - onsemi

Manufacturer Part Number

NSS35200MR6T1G

Manufacturer

onsemi

Introduction

High-voltage, high-current PNP bipolar junction transistor (BJT)

Product Features and Performance

Capable of handling high voltages up to 35V

High current capability up to 2A

High DC current gain of 100 at 1.5A and 1.5V

Transition frequency of 100MHz

Low collector-emitter saturation voltage of 310mV at 20mA, 2A

Product Advantages

Robust and reliable performance

Suitable for high-power switching and amplifier applications

Optimized for efficient power conversion

Key Technical Parameters

Collector-Emitter Breakdown Voltage (max): 35V

Collector Current (max): 2A

Collector Cutoff Current (max): 100nA

DC Current Gain (min): 100 @ 1.5A, 1.5V

Transition Frequency: 100MHz

Power Dissipation (max): 625mW

Operating Temperature: -55°C to 150°C

Quality and Safety Features

RoHS3 compliant

Suitable for reflow soldering process

Compatibility

SOT-23-6 Thin, TSOT-23-6 package

Tape and reel packaging

Application Areas

High-power switching circuits

Power amplifiers

DC-DC converters

Motor drives

Industrial and automotive electronics

Product Lifecycle

Currently in production

No known discontinuation plans

Replacement or upgrade options available from onsemi

Key Reasons to Choose This Product

Proven reliability and performance in high-power applications

Optimized for efficient power conversion

Wide operating temperature range

Ease of integration with standard surface mount packaging

Availability of replacement and upgrade options from the manufacturer