NSS30201MR6T1G - onsemi

Manufacturer Part Number

NSS30201MR6T1G

Manufacturer

onsemi

Introduction

Discrete Semiconductor Product

Transistors Bipolar (BJT) Single

Product Features and Performance

RoHS3 Compliant

6-TSOP Manufacturer's Packaging

SOT-23-6 Thin, TSOT-23-6 Package / Case

6-TSOP Supplier Device Package

Tape & Reel (TR) Packaging

Operating Temperature: -55°C ~ 150°C (TJ)

Power Max: 535 mW

Voltage Collector Emitter Breakdown (Max): 30 V

Current Collector (Ic) (Max): 2 A

Current Collector Cutoff (Max): 100nA

Vce Saturation (Max) @ Ib, Ic: 75mV @ 1mA, 100mA

Transistor Type: NPN

DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V

Frequency Transition: 300MHz

Surface Mount Mounting Type

Product Advantages

RoHS3 Compliant

Wide Operating Temperature Range

High Power Handling

High Voltage Capability

High Current Handling

Low Collector-Emitter Saturation Voltage

High DC Current Gain

High Transition Frequency

Surface Mount Packaging

Key Technical Parameters

Power Rating: 535 mW

Voltage Rating: 30 V

Current Rating: 2 A

Collector-Emitter Saturation Voltage: 75mV

DC Current Gain: 300

Transition Frequency: 300MHz

Quality and Safety Features

RoHS3 Compliant

Compatibility

Compatible with a wide range of electronic circuits and systems

Application Areas

Suitable for use in various electronic circuits and systems that require high-performance NPN bipolar transistors

Product Lifecycle

Current production model, no discontinuation anticipated

Replacement or upgrade models may be available in the future

Several Key Reasons to Choose This Product

RoHS3 compliance for environmental responsibility

Wide operating temperature range for versatile applications

High power, voltage, and current handling capabilities

Low collector-emitter saturation voltage for efficient operation

High DC current gain and transition frequency for high-speed performance

Surface mount packaging for easy integration into compact designs