NSS40200LT1G - onsemi

Manufacturer Part Number

NSS40200LT1G

Manufacturer

onsemi

Introduction

High-performance PNP bipolar junction transistor in a small SOT-23-3 package

Product Features and Performance

Operating temperature range: -55°C to 150°C

Power rating: 460 mW

Collector-emitter breakdown voltage: 40 V

Collector current (max): 2 A

Collector cutoff current (max): 100 nA

Collector-emitter saturation voltage: 170 mV @ 200 mA, 2 A

DC current gain (min): 220 @ 500 mA, 2 V

Transition frequency: 100 MHz

Product Advantages

Compact and efficient design in a small SOT-23-3 package

High power handling capability

Low saturation voltage for improved efficiency

High DC current gain for high-performance applications

Key Technical Parameters

Bipolar junction transistor (BJT) type: PNP

Mounting type: Surface mount

Package: TO-236-3, SC-59, SOT-23-3

Supplier device package: SOT-23-3 (TO-236)

Packaging: Tape & Reel (TR)

Quality and Safety Features

RoHS3 compliant

Reliable and durable design for various applications

Compatibility

Suitable for use in a wide range of electronic circuits and devices, including amplifiers, switches, and power supplies.

Application Areas

Audio and video equipment

Power management circuits

Industrial control systems

Consumer electronics

Product Lifecycle

This product is currently available and not nearing discontinuation. Replacement or upgrade options may be available from the manufacturer or authorized distributors.

Key Reasons to Choose This Product

High-performance PNP transistor in a compact package

Excellent power handling and efficiency

Reliable and RoHS3 compliant design

Suitable for a variety of electronic applications

Readily available and supported by the manufacturer