Manufacturer Part Number
NSS40500UW3T2G
Manufacturer
onsemi
Introduction
High-power PNP bipolar junction transistor (BJT) designed for power switching applications.
Product Features and Performance
High current capability up to 5A
High power dissipation of 875mW
Wide voltage range up to 40V
High current gain of at least 180 at 2A collector current
High transition frequency of 100MHz
Product Advantages
Excellent power handling capability
Suitable for high-current power switching
Fast switching performance
Reliable surface mount package
Key Technical Parameters
Collector-Emitter Voltage (Max): 40V
Collector Current (Max): 5A
Power Dissipation (Max): 875mW
Current Gain (Min): 180 @ 2A, 2V
Transition Frequency: 100MHz
Quality and Safety Features
RoHS3 compliant
Exposed pad for improved thermal performance
3-WDFN (2x2) surface mount package
Compatibility
Suitable for a wide range of power switching applications
Application Areas
Power supplies
Motor drives
Lighting control
Industrial automation
Product Lifecycle
This product is currently in production and readily available.
Replacement or upgraded products may be available in the future.
Key Reasons to Choose This Product
High power handling capability for demanding applications
Fast switching performance for efficient power conversion
Reliable surface mount package for ease of assembly
RoHS compliance for use in environmentally-conscious designs
Wide operating temperature range of -55°C to 150°C