Manufacturer Part Number
NSS60201LT1G
Manufacturer
onsemi
Introduction
High-performance NPN bipolar junction transistor (BJT) for general-purpose amplifier and switching applications.
Product Features and Performance
High current-handling capability up to 2A
Low collector-emitter saturation voltage
High current gain (hFE) up to 150
Wide operating temperature range from -55°C to 150°C
High transition frequency up to 100MHz
Surface-mount package for compact design
Product Advantages
Reliable and robust performance
Efficient power handling
Compact and space-saving design
Broad temperature tolerance
Key Technical Parameters
Collector-Emitter Breakdown Voltage (VCEO): 60V
Collector Current (IC): 2A
Collector-Emitter Saturation Voltage (VCE(sat)): 140mV
Current Gain (hFE): 150 min
Transition Frequency (fT): 100MHz
Quality and Safety Features
RoHS3 compliant
Reliable and durable construction
Tested for quality assurance
Compatibility
Compatible with standard surface-mount assembly processes
Suitable for a wide range of amplifier and switching applications
Application Areas
General-purpose amplifiers
Switching circuits
Power supplies
Instrumentation and control systems
Product Lifecycle
Currently in active production
No plans for discontinuation
Replacement or upgrade options available if needed
Key Reasons to Choose This Product
High current-handling capability for efficient power management
Low saturation voltage for improved energy efficiency
Robust operating temperature range for reliable performance
Compact surface-mount package for space-saving design
High current gain and transition frequency for fast, reliable switching
RoHS compliance for environmental responsibility