Manufacturer Part Number
NSS60200LT1G
Manufacturer
onsemi
Introduction
The NSS60200LT1G is a PNP bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications.
Product Features and Performance
Optimized for switching and amplification
High current handling capability up to 2A
Low collector-emitter saturation voltage
High current gain (hFE) of 150 minimum
Wide operating temperature range of -55°C to 150°C
High transition frequency of 100MHz
Product Advantages
Efficient power handling
Reliable performance
Compact surface mount package
Flexible application possibilities
Key Technical Parameters
Collector-Emitter Breakdown Voltage (BVCEO): 60V
Collector Current (IC): 2A
Collector Cutoff Current (ICBO): 100nA
Collector-Emitter Saturation Voltage (VCE(sat)): 220mV
DC Current Gain (hFE): 150 minimum
Transition Frequency (fT): 100MHz
Quality and Safety Features
RoHS3 compliant
Compact and reliable SOT-23-3 (TO-236) package
Compatibility
This transistor is compatible with a wide range of electronic circuits and systems that require a high-performance PNP bipolar junction transistor.
Application Areas
General-purpose switching and amplification
Power management and control
Audio and consumer electronics
Industrial automation and control
Product Lifecycle
The NSS60200LT1G is an active and readily available product from onsemi. There are no indications of it being discontinued or replaced in the near future.
Several Key Reasons to Choose This Product
High current capability up to 2A
Low collector-emitter saturation voltage for efficient power transfer
Wide operating temperature range suitable for diverse applications
Compact and reliable surface mount package
High current gain and transition frequency for versatile performance
RoHS3 compliance for environmentally-friendly usage
Readily available and actively supported by the manufacturer