NSS60600MZ4T1G - onsemi

Manufacturer Part Number

NSS60600MZ4T1G

Manufacturer

onsemi

Introduction

The NSS60600MZ4T1G is a high-power PNP bipolar junction transistor (BJT) from onsemi. It is designed for use in a variety of high-power switching and amplification applications.

Product Features and Performance

High power handling capability of up to 800 mW

Wide operating temperature range of -55°C to 150°C

High collector-emitter breakdown voltage of up to 60 V

High collector current rating of up to 6 A

Low collector-emitter saturation voltage of 350 mV @ 600 mA, 6 A

High DC current gain of 120 @ 1 A, 2 V

High transition frequency of 100 MHz

Product Advantages

Excellent performance in high-power switching and amplification applications

Reliable and robust design for demanding operating conditions

Compact and space-saving surface mount package

Key Technical Parameters

Collector-Emitter Breakdown Voltage (VCEO): 60 V

Collector Current (IC): 6 A

Collector Cutoff Current (ICBO): 100 nA

Collector-Emitter Saturation Voltage (VCE(sat)): 350 mV @ 600 mA, 6 A

DC Current Gain (hFE): 120 @ 1 A, 2 V

Transition Frequency (fT): 100 MHz

Quality and Safety Features

RoHS3 compliant

Reliable and robust design for long-term operation

Extensive testing and quality control measures

Compatibility

Surface mount package (SOT-223/TO-261) for easy integration into various electronic designs

Application Areas

High-power switching and amplification circuits

Motor control applications

Power supplies and regulators

Industrial and consumer electronics

Product Lifecycle

Currently in active production

No plans for discontinuation at this time

Replacement or upgrade options may be available from onsemi

Several Key Reasons to Choose This Product

Excellent performance in high-power applications

Wide operating temperature range and robust design

Compact and space-saving surface mount package

RoHS3 compliance for environmental responsibility

Reliable and well-tested product from a trusted manufacturer