MUN5213T1G - onsemi

Manufacturer Part Number

MUN5213T1G

Manufacturer

onsemi

Introduction

The MUN5213T1G is a pre-biased NPN bipolar junction transistor (BJT) in a small SC-70-3 (SOT323) surface mount package.

Product Features and Performance

Voltage Collector Emitter Breakdown (Max): 50 V

Current Collector (Ic) (Max): 100 mA

Current Collector Cutoff (Max): 500 nA

Vce Saturation (Max) @ Ib, Ic: 250 mV @ 300 µA, 10 mA

DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5 mA, 10 V

Built-in base and emitter resistors of 47 kOhms

Product Advantages

Small, space-saving surface mount package

Pre-biased configuration simplifies circuit design

Suitable for low-power amplifier and switching applications

Key Technical Parameters

Power Max: 202 mW

Resistor Base (R1): 47 kOhms

Resistor Emitter Base (R2): 47 kOhms

Quality and Safety Features

RoHS3 compliant

Compatibility

Packaged in tape and reel for automated assembly

Application Areas

Low-power amplifier circuits

Switching applications

General-purpose transistor needs

Product Lifecycle

This product is currently in production and available.

Replacements or upgrades may be available in the future.

Key Reasons to Choose This Product

Small, space-saving surface mount package

Pre-biased configuration for simplified circuit design

Suitable for low-power amplifier and switching applications

RoHS3 compliant for environmental considerations

Packaged in tape and reel for automated assembly