MUN5213DW1T1G - onsemi

Manufacturer Part Number

MUN5213DW1T1G

Manufacturer

onsemi

Introduction

Dual NPN pre-biased transistor array in a compact SC-88/SC70-6/SOT-363 package

Product Features and Performance

2 NPN transistors with pre-biased base-emitter junctions

Optimized for linear and switching applications

Designed for compact circuit designs

Product Advantages

Compact package size

Integrated base-emitter bias resistors

Suitable for linear and switching circuit applications

Key Technical Parameters

Power Rating: 250mW

Collector-Emitter Breakdown Voltage: 50V

Collector Current (Max): 100mA

Collector Cutoff Current (Max): 500nA

Collector-Emitter Saturation Voltage: 250mV @ 300μA, 10mA

DC Current Gain (hFE): 80 (Min) @ 5mA, 10V

Base Resistor: 47kΩ

Emitter-Base Resistor: 47kΩ

Quality and Safety Features

RoHS3 compliant

Halogen-free

Compatibility

Surface mount package (SC-88/SC70-6/SOT-363)

Suitable for automated assembly processes

Application Areas

Linear and switching circuits

Amplifiers

Switches

Logic gates

Biasing circuits

Product Lifecycle

Currently in production

Replacements or upgrades may be available in the future

Key Reasons to Choose This Product

Compact and space-saving package

Integrated base-emitter bias resistors for easy circuit design

Suitable for a wide range of linear and switching applications

Reliable and RoHS3 compliant for industrial and commercial use