Manufacturer Part Number
MUN5212DW1T1G
Manufacturer
onsemi
Introduction
The MUN5212DW1T1G is a dual NPN pre-biased bipolar junction transistor (BJT) array with integrated base resistors.
Product Features and Performance
Dual NPN pre-biased BJT array
Integrated base resistors (22 kOhm)
Low collector-emitter saturation voltage (250 mV @ 10 mA)
Low collector cutoff current (500 nA)
Wide collector-emitter breakdown voltage (50 V)
Compact 6-pin TSSOP/SC-88/SOT-363 package
Product Advantages
Space-saving dual transistor design
Integrated biasing resistors eliminate the need for external components
Robust performance characteristics for a variety of applications
Key Technical Parameters
Power rating: 250 mW
Collector-emitter breakdown voltage: 50 V
Collector current (max): 100 mA
Collector cutoff current (max): 500 nA
DC current gain (min): 60 @ 5 mA, 10 V
Quality and Safety Features
RoHS3 compliant
Tape and reel packaging for automated assembly
Compatibility
The MUN5212DW1T1G is compatible with a wide range of electronic circuits and systems that require dual NPN pre-biased transistors in a compact surface-mount package.
Application Areas
General-purpose amplifier and switching applications
Interface circuits
Logic gates
Driver circuits
Product Lifecycle
The MUN5212DW1T1G is an active product and is currently available. There are no immediate plans for discontinuation, and it has readily available replacements and upgrades within onsemi's product portfolio.
Key Reasons to Choose This Product
Integrated biasing resistors simplify circuit design
Robust electrical performance characteristics
Space-saving dual transistor configuration
RoHS3 compliance for environmental sustainability
Availability in tape and reel packaging for automated assembly