MUN5135T1G - onsemi

Manufacturer Part Number

MUN5135T1G

Manufacturer

onsemi

Introduction

Discrete Semiconductor Transistor

Bipolar Junction Transistor (BJT), Single, Pre-Biased

Product Features and Performance

Low power consumption

High breakdown voltage

High current gain

Fast switching speed

Compact surface mount package

Product Advantages

RoHS3 compliant

Cost-effective solution

Easy to integrate into circuit designs

Key Technical Parameters

Package: SC-70, SOT-323

Power Rating: 202 mW

Collector-Emitter Breakdown Voltage: 50 V

Collector Current: 100 mA

Collector Cutoff Current: 500 nA

Collector-Emitter Saturation Voltage: 250 mV

DC Current Gain: 80 (min)

Base Resistor: 2.2 kΩ

Emitter-Base Resistor: 47 kΩ

Quality and Safety Features

RoHS3 compliant

Reliable and robust performance

Compatibility

Suitable for a wide range of electronic circuit designs

Application Areas

Amplifiers

Switches

Logic gates

Low-power electronic devices

Product Lifecycle

Currently available

No plans for discontinuation

Replacement and upgrade options available

Key Reasons to Choose This Product

Cost-effective and space-saving solution

Excellent electrical characteristics for a wide range of applications

Reliable and consistent performance

Easy to integrate into circuit designs

Compliance with RoHS3 regulations