MUN5211DW1T1G - onsemi

Manufacturer Part Number

MUN5211DW1T1G

Manufacturer

onsemi

Introduction

The MUN5211DW1T1G is a dual NPN bipolar junction transistor (BJT) array with pre-biased resistors.

Product Features and Performance

Dual NPN pre-biased transistors

250mW power dissipation

50V collector-emitter breakdown voltage

100mA collector current

500nA collector-emitter cutoff current

250mV collector-emitter saturation voltage at 10mA collector current

35 minimum DC current gain at 5mA collector current

10kΩ base and emitter-base resistors

Product Advantages

Pre-biased transistor array reduces component count

Small size with surface mount package

Reliable performance and long lifetime

Cost-effective solution for common applications

Key Technical Parameters

Power dissipation: 250mW

Collector-emitter breakdown voltage: 50V

Collector current (max): 100mA

Collector-emitter cutoff current (max): 500nA

Collector-emitter saturation voltage: 250mV @ 10mA

DC current gain (min): 35 @ 5mA

Quality and Safety Features

RoHS3 compliant

Reliable performance and long lifetime

Compatibility

Compatible with common surface mount applications

Application Areas

Switching circuits

Logic gates

Amplifier circuits

General-purpose electronics

Product Lifecycle

Currently available

No plans for discontinuation announced

Replacement or upgrade parts may be available in the future

Several Key Reasons to Choose This Product

Compact and space-saving dual transistor design

Excellent electrical characteristics for a wide range of applications

Cost-effective solution with pre-biased transistors

Reliable performance and long lifetime

RoHS3 compliance for environmental responsibility