MUN5212T1G - onsemi

Manufacturer Part Number

MUN5212T1G

Manufacturer

onsemi

Introduction

The MUN5212T1G is a pre-biased NPN bipolar junction transistor (BJT) in a small SC-70 (SOT-323) surface-mount package.

Product Features and Performance

Low-power operation with a maximum power dissipation of 202 mW

Collector-emitter breakdown voltage up to 50 V

Collector current up to 100 mA

Collector cutoff current of 500 nA (max)

Low VCE(sat) of 250 mV @ 10 mA, 300 µA

DC current gain (hFE) of 60 min @ 5 mA, 10 V

Integrated base and emitter resistors of 22 kΩ and 2.2 kΩ, respectively

Product Advantages

Compact, surface-mount SC-70 (SOT-323) package

Pre-biased design simplifies circuit implementation

Suitable for low-power, high-speed switching applications

Key Technical Parameters

Collector-Emitter Breakdown Voltage: 50 V

Collector Current: 100 mA

Collector Cutoff Current: 500 nA

VCE(sat): 250 mV @ 10 mA, 300 µA

DC Current Gain (hFE): 60 min @ 5 mA, 10 V

Base Resistor: 22 kΩ

Emitter Resistor: 2.2 kΩ

Quality and Safety Features

RoHS3 compliant

Suitable for reflow soldering

Compatibility

Surface-mount SC-70 (SOT-323) package

Application Areas

Low-power, high-speed switching circuits

Logic level translation

Driver stages

General-purpose amplification

Product Lifecycle

The MUN5212T1G is an active product and is not nearing discontinuation.

Replacement or upgrade options may be available, but onsemi should be consulted for the latest information.

Key Reasons to Choose This Product

Compact, surface-mount SC-70 (SOT-323) package for space-constrained designs

Pre-biased design simplifies circuit implementation

Suitable for low-power, high-speed switching applications

Robust performance with a high collector-emitter breakdown voltage, low VCE(sat), and good DC current gain

RoHS3 compliance for environmentally friendly applications