MUN5214DW1T1G - onsemi

Manufacturer Part Number

MUN5214DW1T1G

Manufacturer

onsemi

Introduction

The MUN5214DW1T1G is a dual NPN pre-biased bipolar junction transistor (BJT) array from onsemi. It is designed for general-purpose amplification and switching applications.

Product Features and Performance

Dual NPN pre-biased BJT array

Optimized for general-purpose amplification and switching

Low collector-emitter saturation voltage

High current gain

Low collector cutoff current

Product Advantages

Compact SC-88/SC70-6/SOT-363 surface-mount package

Pre-biased for easy integration into circuit designs

Reliable and consistent performance

Cost-effective solution for many applications

Key Technical Parameters

Power rating: 250mW

Collector-emitter breakdown voltage: 50V

Collector current (max): 100mA

Collector cutoff current (max): 500nA

Collector-emitter saturation voltage: 250mV @ 10mA, 300μA

DC current gain: 80 min @ 5mA, 10V

Base resistor: 10kΩ

Emitter-base resistor: 47kΩ

Quality and Safety Features

RoHS3 compliant

Reliable performance and long lifespan

Tested and approved for industrial and consumer applications

Compatibility

Compatible with standard surface-mount assembly processes

Suitable for use in a variety of electronic circuits and devices

Application Areas

General-purpose amplification and switching

Consumer electronics

Industrial control systems

Automotive electronics

Product Lifecycle

Currently in production

No known discontinuation plans

Replacements and upgrades may be available in the future

Key Reasons to Choose This Product

Reliable and consistent performance

Compact and easy-to-integrate package

Cost-effective solution for many applications

Optimized for general-purpose amplification and switching

RoHS3 compliance for environmental responsibility