MUN5215DW1T1G - onsemi

Manufacturer Part Number

MUN5215DW1T1G

Manufacturer

onsemi

Introduction

The MUN5215DW1T1G is a dual NPN pre-biased transistor from onsemi, designed for use in a variety of electronic circuits and applications.

Product Features and Performance

Dual NPN pre-biased transistor

Optimized for low-power, high-gain operation

Collector-emitter breakdown voltage up to 50V

Collector current up to 100mA

Low collector-emitter saturation voltage

Tight current gain matching between the two transistors

Product Advantages

Efficient and compact design for space-constrained applications

Reliable and stable performance over a wide range of operating conditions

Ease of use and drop-in replacement for similar transistor arrays

Key Technical Parameters

Power dissipation: 250mW

Collector-emitter breakdown voltage: 50V

Collector current: 100mA

Collector cutoff current: 500nA

Collector-emitter saturation voltage: 250mV @ 1mA, 10mA

Current gain (hFE): 160 @ 5mA, 10V

Base resistor: 10kOhms

Quality and Safety Features

RoHS3 compliant

Reliable and durable construction

Rigorous quality control and testing

Compatibility

Compatible with a wide range of electronic circuits and applications

Suitable for surface mount assembly

Application Areas

Amplifiers

Switches

Logic circuits

Sensor interfaces

Power management circuits

Product Lifecycle

This product is currently in active production and availability

Replacement or upgrade options may be available in the future

Key Reasons to Choose This Product

Optimized performance and efficiency for low-power, high-gain applications

Reliable and stable operation across a wide range of conditions

Compact and space-saving design for ease of integration

Excellent quality and safety features for long-term reliability

Compatibility with a wide range of electronic circuits and applications