Manufacturer Part Number
MUN5214T1G
Manufacturer
onsemi
Introduction
NPN pre-biased bipolar junction transistor (BJT)
Designed for general-purpose amplification and switching applications
Product Features and Performance
Low-power operation with 202 mW maximum power dissipation
Collector-emitter breakdown voltage of 50 V
Collector current up to 100 mA
Collector cutoff current of 500 nA
Saturation voltage of 250 mV at 10 mA collector current
DC current gain of 80 minimum at 5 mA collector current
Product Advantages
Pre-biased design for simplified biasing circuitry
Suitable for a wide range of general-purpose amplification and switching applications
Surface-mount package (SC-70-3) for compact and efficient board layout
Key Technical Parameters
Collector-emitter breakdown voltage: 50 V
Collector current (max): 100 mA
Collector cutoff current (max): 500 nA
Saturation voltage (max): 250 mV @ 10 mA collector current
DC current gain (min): 80 @ 5 mA collector current
Base resistor (R1): 10 kΩ
Emitter-base resistor (R2): 47 kΩ
Quality and Safety Features
RoHS3 compliant
Packaged in tape and reel format for automated assembly
Compatibility
Suitable for a wide range of general-purpose amplification and switching applications
Application Areas
General-purpose amplification and switching
Low-power electronic circuits
Consumer electronics
Industrial control systems
Product Lifecycle
Currently in production
No indication of discontinuation or availability of replacements/upgrades
Several Key Reasons to Choose This Product
Pre-biased design for simplified circuit implementation
Wide operating voltage and current range for versatile applications
Compact surface-mount packaging for efficient board layout
RoHS3 compliance for environmentally-friendly use
Availability in tape and reel format for automated assembly