MUN5215T1G - onsemi

Manufacturer Part Number

MUN5215T1G

Manufacturer

onsemi

Introduction

Pre-biased NPN bipolar junction transistor (BJT) in a small SC-70 package.

Product Features and Performance

Low collector-emitter saturation voltage

High current gain

Low collector cutoff current

Integrated base resistor

Product Advantages

Space-saving SC-70 package

Pre-biased for simplified circuit design

Reliable and robust performance

Key Technical Parameters

Power rating: 202 mW

Collector-emitter breakdown voltage: 50 V

Collector current (max): 100 mA

Collector cutoff current (max): 500 nA

Collector-emitter saturation voltage: 250 mV @ 1 mA, 10 mA

DC current gain: 160 min @ 5 mA, 10 V

Base resistor: 10 kΩ

Quality and Safety Features

RoHS3 compliant

Reliable surface mount design

Compatibility

Suitable for a wide range of electronic circuit designs requiring a pre-biased NPN transistor

Application Areas

General-purpose amplifier and switching applications

Biasing and load control circuits

Audio and power supply circuits

Product Lifecycle

Currently an active product

Replacements or upgrades may be available in the future

Several Key Reasons to Choose This Product

Space-saving SC-70 package

Integrated base resistor for simplified circuit design

Reliable and robust performance with low saturation voltage and high current gain

RoHS3 compliance for environmental responsibility

Suitable for a wide range of electronic circuit applications