MUN5216DW1T1G - onsemi

Manufacturer Part Number

MUN5216DW1T1G

Manufacturer

onsemi

Introduction

Dual NPN pre-biased bipolar junction transistor (BJT) array in a small surface mount package.

Product Features and Performance

2 NPN pre-biased transistors in a single package

Low collector-emitter saturation voltage

High DC current gain

Low collector cutoff current

250mW power dissipation

50V collector-emitter breakdown voltage

100mA collector current rating

Product Advantages

Space-saving integrated design

Pre-biased for simplified circuit design

High performance in a small package

Suitable for portable and compact electronics

Key Technical Parameters

Package: 6-TSSOP, SC-88, SOT-363

Power Dissipation: 250mW

Collector-Emitter Breakdown Voltage: 50V

Collector Current (Max): 100mA

Collector Cutoff Current (Max): 500nA

Collector-Emitter Saturation Voltage: 250mV @ 1mA, 10mA

DC Current Gain (hFE): 160 @ 5mA, 10V

Base Resistor: 4.7kΩ

Quality and Safety Features

RoHS3 compliant

Reliable surface mount package

Compatibility

Can be used as a drop-in replacement for similar pre-biased NPN transistor arrays

Application Areas

Portable electronics

Compact consumer devices

General purpose amplifier and switching circuits

Product Lifecycle

Current product, no plans for discontinuation

Readily available replacement parts

Key Reasons to Choose This Product

Compact and space-saving integrated design

High performance with low saturation voltage and high current gain

Pre-biased for simplified circuit design

Reliable surface mount package

RoHS3 compliant for environmental responsibility