MUN5232DW1T1G - onsemi

Manufacturer Part Number

MUN5232DW1T1G

Manufacturer

onsemi

Introduction

This is a dual NPN pre-biased bipolar junction transistor (BJT) array from onsemi, designed for use in various electronic circuits and applications.

Product Features and Performance

2 NPN transistors in a single package

Pre-biased for simplified circuit design

Low collector-emitter saturation voltage

High DC current gain

Low collector cutoff current

Surface mount packaging for high-density assembly

Product Advantages

Simplified circuit design with pre-biased transistors

Compact surface mount package for space-saving layouts

Reliable performance and long product life

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 50V

Current Collector (Ic) (Max): 100mA

Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA

DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V

Resistor Base (R1): 4.7kOhms

Resistor Emitter Base (R2): 4.7kOhms

Quality and Safety Features

RoHS3 compliant

Reliable surface mount packaging

Compatibility

This transistor array is compatible with a wide range of electronic circuits and applications that require dual NPN transistors.

Application Areas

Amplifier circuits

Switch circuits

Bias circuits

Logic gates

General-purpose electronic applications

Product Lifecycle

The MUN5232DW1T1G is an active product and is not nearing discontinuation. Replacement or upgraded products may be available in the future.

Key Reasons to Choose This Product

Simplified circuit design with pre-biased transistors

Compact surface mount package for space-saving layouts

Reliable performance and long product life

RoHS3 compliance for environmental responsibility

Wide range of compatible applications