Manufacturer Part Number
MUN5233DW1T1G
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT) Array, Pre-Biased
Product Features and Performance
Dual NPN Pre-Biased Transistor
250mW Max Power Dissipation
50V Collector-Emitter Breakdown Voltage (Max)
100mA Collector Current (Max)
500nA Collector Cutoff Current (Max)
250mV Collector-Emitter Saturation Voltage (Max) at 1mA, 10mA Base Current
80 Minimum DC Current Gain (hFE) at 5mA Collector Current, 10V Collector-Emitter Voltage
7kΩ Base Resistor, 47kΩ Emitter-Base Resistor
Product Advantages
Pre-Biased configuration for simplified biasing
Space-saving surface mount package
Tape and reel packaging for automated assembly
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 50V
Current Collector (Ic) (Max): 100mA
Current Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor Base (R1): 4.7kOhms
Resistor Emitter Base (R2): 47kOhms
Quality and Safety Features
RoHS3 Compliant
Compatibility
SC-88/SC70-6/SOT-363 package
Application Areas
General-purpose amplifier and switch applications
Product Lifecycle
Current production, no known discontinuation
Key Reasons to Choose This Product
Pre-Biased configuration for simplified circuit design
Compact surface mount package for space-constrained designs
Tape and reel packaging for automated assembly
RoHS3 compliance for environmental safety
Proven reliability and performance from onsemi