MUN5233T1G - onsemi

Manufacturer Part Number

MUN5233T1G

Manufacturer

onsemi

Introduction

Pre-biased NPN bipolar junction transistor (BJT)

Designed for use in low-power analog and digital circuits

Product Features and Performance

Power dissipation up to 202 mW

Collector-emitter breakdown voltage up to 50 V

Collector current up to 100 mA

Collector cutoff current limited to 500 nA

Saturation voltage as low as 250 mV @ 1 mA, 10 mA

Current gain of at least 80 @ 5 mA, 10 V

7 kΩ base resistor and 47 kΩ emitter-base resistor

Product Advantages

Pre-biased for simplified circuit design

Compact surface-mount packaging

Reliable performance in a wide range of applications

Key Technical Parameters

Collector-emitter breakdown voltage: 50 V

Collector current: 100 mA

Collector cutoff current: 500 nA

Saturation voltage: 250 mV @ 1 mA, 10 mA

Current gain: 80 @ 5 mA, 10 V

Base resistor: 4.7 kΩ

Emitter-base resistor: 47 kΩ

Quality and Safety Features

RoHS3 compliant

Reliable performance in a wide operating temperature range

Compatibility

Surface-mount packaging (SC-70, SOT-323)

Tape and reel packaging

Application Areas

Low-power analog and digital circuits

Amplifiers, switches, and logic gates

Consumer electronics, industrial automation, and more

Product Lifecycle

Current product, no discontinuation planned

Replacement or upgrade options available if needed

Key Reasons to Choose This Product

Pre-biased design for simplified circuit implementation

Compact surface-mount package for space-constrained designs

Reliable performance over a wide range of operating conditions

Comprehensive set of technical specifications and parameters

RoHS3 compliance for environmentally-friendly applications