MUN5235T1G - onsemi

Manufacturer Part Number

MUN5235T1G

Manufacturer

onsemi

Introduction

Pre-biased NPN bipolar junction transistor (BJT) in a small SC-70-3 (SOT323) package

Product Features and Performance

Low power dissipation of 202 mW

High voltage capability of up to 50 V collector-emitter breakdown voltage

Collector current up to 100 mA

Low collector cutoff current of 500 nA

Saturated collector-emitter voltage as low as 250 mV

DC current gain (hFE) of at least 80 at 5 mA, 10 V

Built-in base and emitter resistors of 2.2 kΩ and 47 kΩ respectively

Product Advantages

Pre-biased design simplifies circuit design

Small, space-saving SC-70-3 (SOT323) package

Suitable for a wide range of low-power amplifier and switching applications

Key Technical Parameters

Maximum power dissipation: 202 mW

Collector-emitter breakdown voltage: 50 V

Collector current (max): 100 mA

Collector cutoff current (max): 500 nA

Collector-emitter saturation voltage: 250 mV @ 1 mA, 10 mA

DC current gain (hFE): 80 min @ 5 mA, 10 V

Base resistor (R1): 2.2 kΩ

Emitter-base resistor (R2): 47 kΩ

Quality and Safety Features

ROHS3 compliant

Housed in a reliable, lead-free SC-70-3 (SOT323) surface mount package

Compatibility

Suitable for a wide range of low-power amplifier and switching applications

Application Areas

Low-power analog and digital circuits

Amplifier and switching applications

General-purpose electronic devices

Product Lifecycle

Current product, no plans for discontinuation

Replacement or upgrade options available if needed

Several Key Reasons to Choose This Product

Pre-biased design for simplified circuit implementation

Compact, space-saving SC-70-3 (SOT323) package

High voltage and current capability for a wide range of applications

Excellent electrical characteristics, including low saturation voltage and high DC current gain

Reliable, RoHS-compliant construction