MUN5237T1G - onsemi

Manufacturer Part Number

MUN5237T1G

Manufacturer

onsemi

Introduction

The MUN5237T1G is a pre-biased NPN bipolar junction transistor (BJT) from onsemi, designed for use in various electronic circuits and applications.

Product Features and Performance

Low collector-emitter saturation voltage

High DC current gain

Integrated base and emitter resistors

Low collector cutoff current

Suitable for low-power switching and amplification applications

Product Advantages

Compact surface-mount package

Integrated resistor network for simplified circuit design

Robust and reliable performance

Suitable for automatic placement and reflow soldering

Key Technical Parameters

Power rating: 202 mW

Collector-emitter breakdown voltage: 50 V

Collector current (max): 100 mA

Collector cutoff current (max): 500 nA

Base resistor: 47 kΩ

Emitter-base resistor: 22 kΩ

Quality and Safety Features

RoHS3 compliant

Meets industry standards for reliability and quality

Compatibility

The MUN5237T1G is a direct replacement for similar pre-biased NPN BJT transistors in various electronic applications.

Application Areas

Low-power switching and amplification circuits

Biasing and protection circuits

Analog and digital electronics

Consumer electronics

Industrial control systems

Product Lifecycle

The MUN5237T1G is an active product and is not nearing discontinuation. Replacements and upgrades may be available from onsemi or other manufacturers.

Several Key Reasons to Choose This Product

Compact and easy-to-use surface-mount package

Integrated resistor network for simplified circuit design

Robust and reliable performance for long-term use

Suitable for a wide range of low-power electronic applications

RoHS3 compliance for environmentally-friendly use