MUN5312DW1T1G - onsemi

Manufacturer Part Number

MUN5312DW1T1G

Manufacturer

onsemi

Introduction

Bipolar Junction Transistor (BJT) array in a pre-biased configuration

Integrates 1 NPN and 1 PNP transistor in a single package

Product Features and Performance

Low noise and distortion performance

High current capability up to 100mA

High voltage rating up to 50V

Low collector-emitter saturation voltage

Product Advantages

Pre-biased configuration simplifies design

Space-saving surface mount package

Reliable and stable performance

Key Technical Parameters

Power rating: 250mW

Collector-emitter breakdown voltage: 50V

Collector current (max): 100mA

Collector cutoff current (max): 500nA

Collector-emitter saturation voltage: 250mV @ 10mA, 300μA

DC current gain: 60 min @ 5mA, 10V

Base resistor: 22kΩ

Emitter-base resistor: 22kΩ

Quality and Safety Features

RoHS3 compliant

Suitable for reflow soldering

Compatibility

Compatible with various surface mount package options: SC-88, SC70-6, SOT-363

Application Areas

Ideal for use in analog and digital circuits

Suitable for audio, video, and power supply applications

Applicable in consumer electronics, industrial equipment, and telecommunications

Product Lifecycle

Currently available, not nearing discontinuation

Replacement or upgrade options may be available from the manufacturer

Several Key Reasons to Choose This Product

Reliable and stable performance with low noise and distortion

Integrated pre-biased configuration simplifies design

High power and voltage rating for versatile applications

Space-saving surface mount package for compact designs

RoHS3 compliance for environmentally-friendly use