Manufacturer Part Number
MUN5314DW1T1
Manufacturer
onsemi
Introduction
Dual Bipolar Pre-Biased Transistor Array
Product Features and Performance
1 NPN, 1 PNP Pre-Biased Transistors
Collector-Emitter Breakdown Voltage: 50V
Collector Current: 100mA
Collector Cutoff Current: 500nA
VCE Saturation: 250mV @ 300μA, 10mA
DC Current Gain: 80 @ 5mA, 10V
Base Resistor: 10kΩ
Emitter-Base Resistor: 47kΩ
Product Advantages
Compact surface mount package
Optimized for low-power, space-constrained applications
Pre-biased transistors simplify circuit design
Key Technical Parameters
Power Rating: 385mW
Collector-Emitter Breakdown Voltage: 50V
Collector Current: 100mA
Collector Cutoff Current: 500nA
VCE Saturation Voltage: 250mV @ 300μA, 10mA
DC Current Gain: 80 @ 5mA, 10V
Base Resistor: 10kΩ
Emitter-Base Resistor: 47kΩ
Quality and Safety Features
RoHS non-compliant
Compatibility
Surface mount package: SC-88/SC70-6/SOT-363
Application Areas
Low-power, space-constrained electronic circuits
Amplifier, switching, and logic applications
Product Lifecycle
The MUN5314DW1T1 is an active product, with no indication of discontinuation.
Replacement or upgrade options may be available from onsemi or other manufacturers.
Several Key Reasons to Choose This Product
Compact surface mount package for space-constrained designs
Pre-biased transistors simplify circuit design and reduce component count
Wide voltage and current ratings suitable for various low-power applications
High DC current gain and low saturation voltage for efficient operation
RoHS non-compliant, which may be preferred for certain applications
MUN5312DW1T2AMI Semiconductor/onsemi