MUN5331DW1T1G - onsemi

Manufacturer Part Number

MUN5331DW1T1G

Manufacturer

onsemi

Introduction

The MUN5331DW1T1G is a pre-biased, dual bipolar junction transistor (BJT) array in a compact surface-mount package.

Product Features and Performance

Dual NPN and PNP transistors in a single package

Pre-biased design for easy implementation

Low saturation voltage for efficient signal transmission

Stable performance over temperature and voltage range

Small footprint and low profile surface-mount package

Product Advantages

Compact and space-saving design

Simplified circuit design with pre-biased configuration

Efficient power consumption and signal transmission

Reliable and stable operation in diverse applications

Key Technical Parameters

Power dissipation: 250 mW

Collector-emitter breakdown voltage: 50 V

Collector current (max): 100 mA

Collector cutoff current: 500 nA

Collector-emitter saturation voltage: 250 mV @ 5 mA, 10 mA

DC current gain (hFE): 8 min @ 5 mA, 10 V

Base resistor: 2.2 kOhms

Emitter-base resistor: 2.2 kOhms

Quality and Safety Features

RoHS3 compliant

Suitable for reflow soldering in Tape & Reel packaging

Compatibility

Compatible with various electronic circuits and systems that require dual bipolar transistors

Application Areas

Amplifiers

Switches

Logic gates

Biasing circuits

Level shifting

General-purpose analog and digital circuits

Product Lifecycle

The MUN5331DW1T1G is an active and readily available product from onsemi.

No discontinuation or end-of-life announcement for this product at this time.

Key Reasons to Choose This Product

Compact and space-saving dual BJT design

Pre-biased configuration for simplified circuit implementation

Efficient power consumption and signal transmission

Reliable and stable performance over temperature and voltage range

RoHS3 compliance for use in diverse applications

Availability in Tape & Reel packaging for convenient manufacturing integration