MUN5332DW1T1G - onsemi

Manufacturer Part Number

MUN5332DW1T1G

Manufacturer

onsemi

Introduction

onsemi's MUN5332DW1T1G is a dual pre-biased bipolar junction transistor (BJT) array in a 6-pin SC-88/SC70-6/SOT-363 surface mount package.

Product Features and Performance

1 NPN, 1 PNP pre-biased transistor array

Collector-emitter breakdown voltage (VCEO) of 50V

Collector current (IC) of up to 100mA

Low collector-emitter saturation voltage (VCE(sat)) of 250mV at 1mA, 10mA

Tight matching of transistor characteristics

Small surface mount package for high-density PCB designs

Product Advantages

Pre-biased design simplifies circuit implementation

Optimized for space-constrained applications

Tight transistor matching for reliable performance

Key Technical Parameters

Power rating: 250mW

Collector-emitter breakdown voltage (VCEO): 50V

Collector current (IC): 100mA

Collector cutoff current (ICBO): 500nA

DC current gain (hFE): 15 (min) at 5mA, 10V

Base resistors (R1, R2): 4.7kΩ

Quality and Safety Features

RoHS3 compliant

AEC-Q101 qualified

Compatibility

The MUN5332DW1T1G is compatible with various electronic circuits and systems that require a pre-biased dual BJT array in a small surface mount package.

Application Areas

Audio amplifiers

Switching circuits

Logic level conversion

Analog signal processing

General-purpose electronic circuits

Product Lifecycle

The MUN5332DW1T1G is an active product and is not nearing discontinuation. Replacement or upgrade options are available from onsemi.

Key Reasons to Choose This Product

Pre-biased design for simplified circuit implementation

Compact surface mount package for high-density PCB designs

Tight transistor matching for reliable and consistent performance

RoHS3 compliance and AEC-Q101 qualification for quality and safety

Availability of replacement or upgrade options from the manufacturer