Manufacturer Part Number
MUN5335DW1T1
Manufacturer
onsemi
Introduction
The MUN5335DW1T1 is a dual pre-biased bipolar junction transistor (BJT) array product from onsemi.
Product Features and Performance
1 NPN and 1 PNP pre-biased transistors in a single package
Low power dissipation of 385mW
Collector-emitter breakdown voltage up to 50V
Collector current up to 100mA
Low collector cutoff current of 500nA
Saturation voltage of 250mV at 10mA collector current
DC current gain (hFE) of 80 minimum at 5mA collector current
Product Advantages
Compact surface mount package
Integrated pre-biasing resistors for easy circuit design
Suitable for low power analog and digital applications
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 50V
Current Collector (Ic) (Max): 100mA
Current Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor Base (R1): 2.2kOhms
Resistor Emitter Base (R2): 47kOhms
Quality and Safety Features
RoHS non-compliant
Compatibility
Package: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-88/SC70-6/SOT-363
Application Areas
Low power analog and digital circuits
Switch mode power supplies
Logic gates
Drivers
Biasing circuits
Product Lifecycle
This is an active product from onsemi, with no indication of discontinuation.
Several Key Reasons to Choose This Product
Compact surface mount package
Integrated pre-biasing resistors for easy circuit design
Suitable for low power analog and digital applications
Wide range of technical parameters to meet various design requirements
Reliable quality and performance from a reputable manufacturer like onsemi