MUN5314DW1T1G - onsemi

Manufacturer Part Number

MUN5314DW1T1G

Manufacturer

onsemi

Introduction

The MUN5314DW1T1G is a dual pre-biased bipolar junction transistor (BJT) array from onsemi, designed for use in a variety of electronic circuits and applications.

Product Features and Performance

Dual NPN and PNP transistor configuration

Pre-biased transistors for simplified circuit design

Low collector-emitter saturation voltage

High DC current gain

Wide collector-emitter breakdown voltage

Low collector cutoff current

Suitable for surface mount applications

Product Advantages

Simplified circuit design with pre-biased transistors

Reliable performance in a small package

Versatile for use in various electronic circuits

Key Technical Parameters

Power Rating: 250mW

Collector-Emitter Breakdown Voltage: 50V

Collector Current (Max): 100mA

Collector Cutoff Current (Max): 500nA

Collector-Emitter Saturation Voltage: 250mV @ 10mA, 300μA

DC Current Gain: 80 @ 5mA, 10V

Quality and Safety Features

RoHS3 compliant

Suitable for tape and reel packaging

Compatibility

Compatible with surface mount assembly processes

Application Areas

Analog and digital circuits

Switches and logic gates

Amplifier circuits

Biasing circuits

Product Lifecycle

Currently in production

No known plans for discontinuation

Several Key Reasons to Choose This Product

Simplified circuit design with pre-biased transistors

Reliable performance in a small package

Wide range of applications in analog and digital circuits

Compliant with RoHS3 regulations

Availability in tape and reel packaging for efficient manufacturing