MUN5312DW1T2G - onsemi

Manufacturer Part Number

MUN5312DW1T2G

Manufacturer

onsemi

Introduction

Discrete Semiconductor Products

Transistors Bipolar (BJT) Arrays, Pre-Biased

Product Features and Performance

RoHS3 Compliant

Surface Mount

6-TSSOP, SC-88, SOT-363 Package

Tape & Reel (TR) Packaging

Power Max: 385mW

Voltage Collector Emitter Breakdown (Max): 50V

Current Collector (Ic) (Max): 100mA

Current Collector Cutoff (Max): 500nA

Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA

Transistor Type: 1 NPN, 1 PNP Pre-Biased (Dual)

DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V

Resistor Base (R1): 22kOhms

Resistor Emitter Base (R2): 22kOhms

Product Advantages

Compact surface mount package

High breakdown voltage

Low collector cutoff current

Low saturation voltage

Dual pre-biased transistor design

Key Technical Parameters

Power Rating

Voltage Rating

Current Ratings

Saturation Voltage

Transistor Configuration

Current Gain

Quality and Safety Features

RoHS3 Compliant

Compatibility

Compatible with various surface mount applications

Application Areas

General purpose amplifier and switching circuits

Biasing networks

Logic gates

Interface circuits

Product Lifecycle

Current product, no discontinuation planned

Replacements and upgrades available

Key Reasons to Choose

Compact and space-saving design

High voltage and current handling capability

Low saturation voltage for efficient operation

Integrated dual transistor configuration for simplified design

RoHS compliance for environmental responsibility