MUN5311DW1T1 - onsemi

Manufacturer Part Number

MUN5311DW1T1

Manufacturer

onsemi

Introduction

Discrete Semiconductor Products

Transistors Bipolar (BJT) Arrays, Pre-Biased

Product Features and Performance

RoHS non-compliant

Package: 6-TSSOP, SC-88, SOT-363

Power Max: 385mW

Voltage Collector Emitter Breakdown (Max): 50V

Current Collector (Ic) (Max): 100mA

Current Collector Cutoff (Max): 500nA

Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA

Transistor Type: 1 NPN, 1 PNP Pre-Biased (Dual)

DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V

Resistor Base (R1): 10kOhms

Resistor Emitter Base (R2): 10kOhms

Product Advantages

Pre-Biased transistor array for space-saving design

Suitable for low-power applications

Key Technical Parameters

Power Max: 385mW

Voltage Collector Emitter Breakdown (Max): 50V

Current Collector (Ic) (Max): 100mA

Quality and Safety Features

RoHS non-compliant

Compatibility

Surface Mount

Application Areas

Low-power electronic devices

Amplifier circuits

Switching circuits

Product Lifecycle

No information on discontinuation or availability of replacements/upgrades

Key Reasons to Choose This Product

Pre-Biased transistor array for space-saving design

Suitable for low-power applications

Reliable onsemi brand