MUN5311DW1T1G - onsemi

Manufacturer Part Number

MUN5311DW1T1G

Manufacturer

onsemi

Introduction

Pre-biased bipolar junction transistor (BJT) array in a small surface mount package.

Product Features and Performance

Dual transistor array with one NPN and one PNP transistor

Pre-biased with internal base resistors

Low collector-emitter saturation voltage

High DC current gain

Low collector cutoff current

Low power dissipation

Surface mount package

Product Advantages

Space-saving dual-transistor design

Integrated base resistors simplify circuit design

High reliability and performance

Compact surface mount package

Key Technical Parameters

Power Rating: 250mW

Collector-Emitter Breakdown Voltage: 50V

Collector Current (Max): 100mA

Collector Cutoff Current (Max): 500nA

Collector-Emitter Saturation Voltage: 250mV @ 10mA, 300μA

DC Current Gain: 35 min @ 5mA, 10V

Base Resistor: 10kΩ

Quality and Safety Features

RoHS3 compliant

Reliable SC-88/SC70-6/SOT-363 package

Compatibility

Compatible with a wide range of electronic circuits and applications.

Application Areas

Switching circuits

Biasing circuits

Logic gates

Amplifier circuits

Product Lifecycle

Currently in production. No plans for discontinuation. Replacement or upgrade options available.

Key Reasons to Choose

Compact dual-transistor design

Integrated base resistors for simplified circuit design

High reliability and performance

Compliant with RoHS3 standards

Available in surface mount package