MUN5313DW1T1G - onsemi

Manufacturer Part Number

MUN5313DW1T1G

Manufacturer

onsemi

Introduction

The MUN5313DW1T1G is a pre-biased dual bipolar junction transistor (BJT) array from onsemi, designed for a variety of applications.

Product Features and Performance

Dual NPN and PNP transistors in a single package

Pre-biased with internal resistors for simplified circuit design

Low collector-emitter saturation voltage (Vce(sat))

Wide collector-emitter breakdown voltage (BVCEO)

High DC current gain (hFE)

Low collector cutoff current (ICBO)

Surface mount package for compact design

Product Advantages

Simplified circuit design with pre-biased transistors

Improved efficiency and performance compared to discrete transistor solutions

Compact and space-saving surface mount package

Key Technical Parameters

Power Rating: 250 mW

Collector-Emitter Breakdown Voltage (BVCEO): 50 V

Collector Current (IC): 100 mA

Collector Cutoff Current (ICBO): 500 nA

DC Current Gain (hFE): 80 (min)

Collector-Emitter Saturation Voltage (Vce(sat)): 250 mV @ 10 mA, 300 μA

Quality and Safety Features

RoHS3 compliant

Manufactured in ISO-certified facilities

Compatibility

Suitable for a wide range of electronic applications and circuits

Application Areas

Amplifiers

Switches

Logic gates

Small signal processing

Bias circuits

Product Lifecycle

The MUN5313DW1T1G is an actively supported product by onsemi.

Replacement or upgraded products may be available in the future.

Key Reasons to Choose This Product

Simplified circuit design with pre-biased transistors

Improved efficiency and performance compared to discrete transistor solutions

Wide operating voltage and current range

Compact and space-saving surface mount package

Reliable and RoHS3 compliant