MUN5315DW1T1G - onsemi

Manufacturer Part Number

MUN5315DW1T1G

Manufacturer

onsemi

Introduction

Bipolar Junction Transistor (BJT) Array, Pre-Biased

Product Features and Performance

1 NPN and 1 PNP pre-biased transistors in one package

Collector-emitter voltage up to 50V

Collector current up to 100mA

Low collector-emitter saturation voltage

Typical DC current gain of 160

Product Advantages

Space-saving 6-pin SC-88/SC70-6/SOT-363 package

Pre-biased for easier circuit design

Reliable performance in compact designs

Key Technical Parameters

Power rating: 250mW

Collector-emitter breakdown voltage: 50V

Collector current: 100mA

Collector cutoff current: 500nA

Collector-emitter saturation voltage: 250mV @ 1mA, 10mA

DC current gain: 160 @ 5mA, 10V

Base resistor: 10kOhms

Quality and Safety Features

RoHS3 compliant

Surface mount packaging for reliable connections

Compatibility

Compatible with a wide range of electronic devices and circuits

Application Areas

Amplifiers

Switches

Logic gates

Biasing circuits

General-purpose signal processing

Product Lifecycle

Current product, no discontinuation plans

Availability of replacements and upgrades

Key Reasons to Choose This Product

Compact, space-saving package

Pre-biased for easier circuit design

Reliable performance with high voltage and current capabilities

Suitable for a wide range of electronic applications

RoHS3 compliant for environmental safety