Manufacturer Part Number
MUN5235DW1T1G
Manufacturer
onsemi
Introduction
The MUN5235DW1T1G is a dual NPN pre-biased bipolar junction transistor (BJT) array from onsemi, designed for a variety of applications.
Product Features and Performance
Dual NPN pre-biased BJT array
250mW maximum power dissipation
50V maximum collector-emitter breakdown voltage
100mA maximum collector current
500nA maximum collector cutoff current
250mV maximum collector-emitter saturation voltage at 10mA collector current
80 minimum DC current gain at 5mA collector current and 10V collector-emitter voltage
2kOhm base resistor and 47kOhm emitter-base resistor
Product Advantages
Pre-biased design simplifies circuit design
Surface mount package for compact and efficient assembly
Suitable for a variety of applications
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 50V
Current Collector (Ic) (Max): 100mA
Current Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor Base (R1): 2.2kOhms
Resistor Emitter Base (R2): 47kOhms
Quality and Safety Features
RoHS3 compliant
Compatibility
Manufacturer's packaging: SC-88/SC70-6/SOT-363
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-88/SC70-6/SOT-363
Package: Tape & Reel (TR)
Application Areas
Suitable for a variety of applications where a dual NPN pre-biased BJT array is required
Product Lifecycle
Currently available, no information on discontinuation or replacements
Key Reasons to Choose This Product
Pre-biased design simplifies circuit design
Surface mount package for compact and efficient assembly
Suitable for a variety of applications
RoHS3 compliant for environmental considerations
Available in commonly used packaging options