MUN5335DW1T1G - onsemi

Manufacturer Part Number

MUN5335DW1T1G

Manufacturer

onsemi

Introduction

Dual NPN-PNP Bipolar Junction Transistor (BJT) Array with Pre-Biased Configuration

Product Features and Performance

Two transistors in one package (1 NPN, 1 PNP)

Pre-biased configuration for simplified circuit design

Low collector-emitter saturation voltage (Vce(sat))

High DC current gain (hFE)

Low collector cutoff current (ICBO)

Low power dissipation of 250mW

Voltage rating up to 50V

Product Advantages

Simplified circuit design with pre-biased configuration

Improved performance and reliability compared to discrete transistors

Space-saving solution in compact applications

Key Technical Parameters

Collector-Emitter Breakdown Voltage (VCEO): 50V

Collector Current (IC): 100mA

Collector Cutoff Current (ICBO): 500nA

DC Current Gain (hFE): Minimum 80 @ 5mA, 10V

Collector-Emitter Saturation Voltage (Vce(sat)): Maximum 250mV @ 300μA, 10mA

Base Resistor (R1): 2.2kΩ

Emitter-Base Resistor (R2): 47kΩ

Quality and Safety Features

RoHS3 compliant

Meets industry quality and reliability standards

Compatibility

Compatible with standard surface mount assembly processes

Suitable for a wide range of electronic applications

Application Areas

Analog and digital circuits

Switching applications

Amplifier circuits

Power management circuits

Product Lifecycle

Currently in active production

No known plans for discontinuation

Replacements or upgrades may be available in the future

Key Reasons to Choose This Product

Simplified circuit design with pre-biased configuration

Improved performance and reliability compared to discrete transistors

Space-saving solution in compact applications

Wide operating voltage range up to 50V

Excellent electrical characteristics, including low Vce(sat) and high hFE

Meets industry quality and safety standards