MUN5335DW1T2G - onsemi

Manufacturer Part Number

MUN5335DW1T2G

Manufacturer

onsemi

Introduction

The MUN5335DW1T2G is a pre-biased transistor array, consisting of one NPN and one PNP bipolar junction transistor (BJT) in a single package. This device is designed for use in a variety of electronic circuits and applications.

Product Features and Performance

1 NPN, 1 PNP pre-biased transistor array

Breakdown voltage (BVCEO) of 50V

Collector current (IC) of up to 100mA

Low collector-emitter saturation voltage (VCE(sat)) of 250mV

High DC current gain (hFE) of at least 80

Integrated base resistors of 2.2kΩ and 47kΩ

Product Advantages

Compact and space-saving package

Simplified circuit design with pre-biased transistors

Suitable for a wide range of electronic applications

Key Technical Parameters

Manufacturer Part Number: MUN5335DW1T2G

Package: 6-TSSOP, SC-88, SOT-363

Power Rating: 250mW

Collector-Emitter Breakdown Voltage (BVCEO): 50V

Collector Current (IC): 100mA

Collector Cutoff Current (ICBO): 500nA

Collector-Emitter Saturation Voltage (VCE(sat)): 250mV

Quality and Safety Features

RoHS3 compliant

Manufactured by onsemi, a reputable semiconductor company

Compatibility

The MUN5335DW1T2G is a general-purpose transistor array and is compatible with a wide range of electronic circuits and applications.

Application Areas

Amplifiers

Switches

Logic circuits

Biasing circuits

General-purpose electronic devices

Product Lifecycle

The MUN5335DW1T2G is an active product, and there are no immediate plans for discontinuation. Replacement or upgrade options may be available from onsemi or other manufacturers.

Key Reasons to Choose This Product

Compact and space-saving package

Simplified circuit design with pre-biased transistors

High performance specifications, including high breakdown voltage, low saturation voltage, and high current gain

Reliable and RoHS-compliant design from a reputable manufacturer

Compatibility with a wide range of electronic applications