Manufacturer Part Number
MUN5211T1G
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT), Single, Pre-Biased
Product Features and Performance
Surface Mount, SC-70-3 (SOT323) Package
Low Power Dissipation: 202 mW
High Collector-Emitter Breakdown Voltage: 50 V
High Collector Current Capability: 100 mA
Low Collector Cutoff Current: 500 nA
Low Collector-Emitter Saturation Voltage: 250 mV
Wide DC Current Gain Range: 35 (Min)
On-Chip Base and Emitter-Base Resistors: 10 kOhms
Product Advantages
Compact Surface Mount Package
Pre-Biased for Easy Circuit Integration
Robust Performance Characteristics
Key Technical Parameters
Collector-Emitter Breakdown Voltage: 50 V
Collector Current (Max): 100 mA
Collector Cutoff Current (Max): 500 nA
Collector-Emitter Saturation Voltage: 250 mV
DC Current Gain (Min): 35
Base and Emitter-Base Resistors: 10 kOhms
Quality and Safety Features
RoHS3 Compliant
Compatibility
Can be used in a variety of electronic circuits and applications
Application Areas
General-purpose amplifier and switching applications
Suitable for use in consumer electronics, industrial, and automotive applications
Product Lifecycle
This product is currently in production and is not nearing discontinuation.
Replacement or upgrade options may be available from onsemi.
Key Reasons to Choose This Product
Compact Surface Mount Package
Pre-Biased for Easy Circuit Integration
Robust Performance Characteristics
High Collector-Emitter Breakdown Voltage
High Collector Current Capability
Low Collector Cutoff Current
Low Collector-Emitter Saturation Voltage
Wide DC Current Gain Range
On-Chip Base and Emitter-Base Resistors
RoHS3 Compliance
MUN5211DW1T1GonsemiTRANS PREBIAS 2NPN 50V SC88