MUN5132T1G - onsemi

Manufacturer Part Number

MUN5132T1G

Manufacturer

onsemi

Introduction

Bipolar Junction Transistor (BJT)

Pre-Biased configuration

Product Features and Performance

High current gain

Low collector-emitter saturation voltage

Low collector cutoff current

Suitable for low-power amplifier and switch applications

Product Advantages

Integrated base-emitter resistor for easy biasing

Compact surface-mount package

Excellent thermal and electrical performance

Key Technical Parameters

Power Rating: 202 mW

Collector-Emitter Breakdown Voltage: 50 V

Collector Current (Max): 100 mA

Collector Cutoff Current (Max): 500 nA

Collector-Emitter Saturation Voltage: 250 mV @ 1 mA, 10 mA

DC Current Gain: 15 min @ 5 mA, 10 V

Base Resistor: 4.7 kΩ

Emitter-Base Resistor: 4.7 kΩ

Quality and Safety Features

RoHS3 compliant

Suitable for Tape & Reel (TR) packaging

Compatibility

Surface-mount package (SC-70, SOT-323)

Application Areas

Low-power amplifier circuits

Switch applications

General-purpose transistor applications

Product Lifecycle

Current product, not nearing discontinuation

Replacements and upgrades available

Several Key Reasons to Choose This Product

Integrated base-emitter resistor for easy biasing

Compact surface-mount package for space-constrained designs

Excellent thermal and electrical performance for reliable operation

Suitable for a wide range of low-power amplifier and switch applications

RoHS3 compliance for environmentally-friendly use