Manufacturer Part Number
MMUN2115LT1G
Manufacturer
onsemi
Introduction
The MMUN2115LT1G is a pre-biased PNP bipolar junction transistor (BJT) in a surface-mount SOT-23-3 (TO-236) package.
Product Features and Performance
400 mW maximum power dissipation
50 V maximum collector-emitter breakdown voltage
100 mA maximum collector current
500 nA maximum collector cutoff current
250 mV maximum collector-emitter saturation voltage at 10 mA collector current
160 minimum DC current gain at 5 mA collector current and 10 V collector-emitter voltage
10 kΩ base resistor
Product Advantages
Pre-biased for simplified circuit design
Small surface-mount SOT-23-3 (TO-236) package
High breakdown voltage and low saturation voltage for efficient operation
Robust performance characteristics
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 50 V
Current Collector (Ic) (Max): 100 mA
Current Collector Cutoff (Max): 500 nA
Vce Saturation (Max) @ Ib, Ic: 250 mV @ 300 µA, 10 mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5 mA, 10 V
Resistor Base (R1): 10 kΩ
Quality and Safety Features
RoHS3 compliant
Manufactured in an ISO-certified facility
Compatibility
Suitable for a wide range of electronic circuit applications
Application Areas
Amplifiers
Switches
Biasing circuits
Logic gates
General-purpose electronic circuits
Product Lifecycle
The MMUN2115LT1G is an active product and not nearing discontinuation.
Replacement or upgrade options are available from onsemi.
Key Reasons to Choose This Product
Pre-biased design for simplified circuit implementation
Compact surface-mount SOT-23-3 (TO-236) package
Robust performance characteristics, including high breakdown voltage, low saturation voltage, and high current gain
RoHS3 compliance and ISO-certified manufacturing for quality and safety
Broad compatibility and application versatility