Manufacturer Part Number
MMUN2114LT1G
Manufacturer
onsemi
Introduction
Pre-biased PNP bipolar junction transistor (BJT)
Product Features and Performance
Discrete semiconductor device
Pre-biased for ease of use
Low collector-emitter saturation voltage
High current gain
Product Advantages
Simplified circuit design
Improved reliability
Reduced power consumption
Key Technical Parameters
Power rating: 246 mW
Collector-emitter breakdown voltage: 50 V
Collector current (max): 100 mA
Collector cutoff current (max): 500 nA
Collector-emitter saturation voltage: 250 mV @ 10 mA
DC current gain: 80 min @ 5 mA, 10 V
Base resistance: 10 kΩ
Emitter-base resistance: 47 kΩ
Quality and Safety Features
RoHS3 compliant
Surface mount package (SOT-23-3)
Compatibility
Compatible with various electronic circuits and applications
Application Areas
Amplifiers
Switches
Logic gates
Biasing circuits
Product Lifecycle
Current product, not nearing discontinuation
Replacement or upgrade options available
Key Reasons to Choose This Product
Simplified circuit design with pre-biased feature
Reliable performance with high current gain and low saturation voltage
Efficient power consumption
Compact surface mount package
RoHS compliance for environmental safety