MMUN2114LT1G - onsemi

Manufacturer Part Number

MMUN2114LT1G

Manufacturer

onsemi

Introduction

Pre-biased PNP bipolar junction transistor (BJT)

Product Features and Performance

Discrete semiconductor device

Pre-biased for ease of use

Low collector-emitter saturation voltage

High current gain

Product Advantages

Simplified circuit design

Improved reliability

Reduced power consumption

Key Technical Parameters

Power rating: 246 mW

Collector-emitter breakdown voltage: 50 V

Collector current (max): 100 mA

Collector cutoff current (max): 500 nA

Collector-emitter saturation voltage: 250 mV @ 10 mA

DC current gain: 80 min @ 5 mA, 10 V

Base resistance: 10 kΩ

Emitter-base resistance: 47 kΩ

Quality and Safety Features

RoHS3 compliant

Surface mount package (SOT-23-3)

Compatibility

Compatible with various electronic circuits and applications

Application Areas

Amplifiers

Switches

Logic gates

Biasing circuits

Product Lifecycle

Current product, not nearing discontinuation

Replacement or upgrade options available

Key Reasons to Choose This Product

Simplified circuit design with pre-biased feature

Reliable performance with high current gain and low saturation voltage

Efficient power consumption

Compact surface mount package

RoHS compliance for environmental safety