MMUN2116LT1G - onsemi

Manufacturer Part Number

MMUN2116LT1G

Manufacturer

onsemi

Introduction

The MMUN2116LT1G is a PNP pre-biased bipolar junction transistor (BJT) designed for use in a variety of electronic circuits and applications.

Product Features and Performance

Power rating of 246 mW

Collector-emitter breakdown voltage of 50 V

Collector current (max) of 100 mA

Collector cutoff current (max) of 500 nA

Low collector-emitter saturation voltage of 250 mV @ 1 mA, 10 mA

DC current gain (hFE) of at least 160 @ 5 mA, 10 V

Built-in base resistor of 4.7 kΩ

Product Advantages

Pre-biased design simplifies circuit design

Surface mount package for compact assembly

High power and voltage handling capabilities

Low saturation voltage for efficient operation

Guaranteed minimum DC current gain

Key Technical Parameters

Collector-emitter breakdown voltage: 50 V

Collector current (max): 100 mA

Collector cutoff current (max): 500 nA

Collector-emitter saturation voltage: 250 mV @ 1 mA, 10 mA

DC current gain (hFE): 160 @ 5 mA, 10 V

Base resistor value: 4.7 kΩ

Quality and Safety Features

RoHS3 compliant

Meets industry quality and reliability standards

Compatibility

Surface mount SOT-23-3 (TO-236) package

Can be used in a wide range of electronic circuits and applications

Application Areas

Amplifiers

Switches

Biasing circuits

General-purpose electronic applications

Product Lifecycle

This product is currently in production and is not nearing discontinuation.

Replacements and upgrades may be available as technology evolves.

Key Reasons to Choose This Product

Pre-biased design simplifies circuit implementation

High power and voltage handling capabilities

Low saturation voltage for efficient operation

Guaranteed minimum DC current gain

Small surface mount package for compact assembly

Compliance with RoHS3 standards for environmental responsibility