MMUN2131LT1G - onsemi

Manufacturer Part Number

MMUN2131LT1G

Manufacturer

onsemi

Introduction

This is a single, pre-biased bipolar junction transistor (BJT) from onsemi.

Product Features and Performance

Capable of handling a maximum collector current of 100 mA.

Offers a maximum collector-emitter breakdown voltage of 50 V.

Provides a minimum DC current gain (hFE) of 8 at a collector current of 5 mA and a collector-emitter voltage of 10 V.

Features built-in base and emitter resistors of 2.2 kΩ each.

Designed for surface mount applications.

Product Advantages

Pre-biased design simplifies circuit design.

Compact SOT-23-3 (TO-236) package.

RoHS3 compliant.

Key Technical Parameters

Power Rating: 246 mW

Collector-Emitter Breakdown Voltage (max): 50 V

Collector Current (max): 100 mA

Collector Cutoff Current (max): 500 nA

Collector-Emitter Saturation Voltage (max): 250 mV @ 5 mA, 10 mA

Transistor Type: PNP, Pre-Biased

Base Resistor (R1): 2.2 kΩ

Emitter Base Resistor (R2): 2.2 kΩ

Quality and Safety Features

RoHS3 compliant.

Compatibility

Compatible with standard surface mount assembly processes.

Application Areas

Suitable for use in a variety of analog and digital circuit designs, including amplifiers, switches, and logic gates.

Product Lifecycle

This product is an active and widely available part from onsemi.

Several Key Reasons to Choose This Product

Pre-biased design simplifies circuit implementation.

Compact SOT-23-3 (TO-236) package suitable for space-constrained applications.

Robust technical specifications, including high voltage and current capabilities.

RoHS3 compliance for use in environmentally conscious applications.

Widely available and actively supported by the manufacturer.