MMUN2211LT1 - onsemi

Manufacturer Part Number

MMUN2211LT1

Manufacturer

onsemi

Introduction

Discrete Semiconductor Product

Transistors Bipolar (BJT) Single, Pre-Biased

Product Features and Performance

246 mW Power Dissipation Capability

50 V Collector-Emitter Breakdown Voltage (Max)

100 mA Collector Current (Max)

500 nA Collector Cutoff Current (Max)

250 mV Collector-Emitter Saturation Voltage (Max) at 10 mA Collector Current

35 DC Current Gain (hFE) (Min) at 5 mA Collector Current, 10 V Collector-Emitter Voltage

10 kΩ Base Resistor

10 kΩ Emitter-Base Resistor

Product Advantages

Pre-biased transistor design for simplified circuit implementation

Compact SOT-23-3 (TO-236) surface mount package

Key Technical Parameters

RoHS non-compliant

Surface Mount Mounting Type

TO-236-3, SC-59, SOT-23-3 Package

Quality and Safety Features

Manufacturer's Packaging: SOT-23-3 (TO-236)

Cut Tape (CT) Packaging

Compatibility

Compatible with a variety of electronic circuits and systems

Application Areas

Suitable for use in various electronic applications requiring a pre-biased NPN transistor

Product Lifecycle

Current product, no information on discontinuation or replacement availability

Key Reasons to Choose This Product

Compact and efficient pre-biased transistor design

Proven reliability and performance from onsemi

Suitable for a wide range of electronic applications