Manufacturer Part Number
MMUN2214LT1G
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Transistors Bipolar (BJT) Single, Pre-Biased
Product Features and Performance
RoHS Compliant
SOT-23-3 (TO-236) Package
Power Rating: 246 mW
Collector-Emitter Breakdown Voltage: 50 V
Collector Current: 100 mA
Collector Cutoff Current: 500 nA
Saturation Voltage: 250 mV @ 300 μA, 10 mA
NPN Pre-Biased Transistor
DC Current Gain (hFE): 80 Min @ 5 mA, 10 V
Base Resistor: 10 kΩ
Emitter-Base Resistor: 47 kΩ
Surface Mount Mounting
Product Advantages
Pre-biased for easy circuit integration
Compact SOT-23-3 (TO-236) package
Suitable for low-power, space-constrained applications
Key Technical Parameters
Power Rating: 246 mW
Collector-Emitter Breakdown Voltage: 50 V
Collector Current: 100 mA
DC Current Gain (hFE): 80 Min
Quality and Safety Features
RoHS Compliant
Compatibility
Standard SOT-23-3 (TO-236) package
Application Areas
Low-power, space-constrained circuits
General-purpose signal amplification and switching
Product Lifecycle
Active product
Replacement or upgrade options available
Key Reasons to Choose This Product
Pre-biased for easy circuit integration
Compact SOT-23-3 (TO-236) package
Suitable for low-power, space-constrained applications
RoHS compliance for environmental responsibility