MMUN2211LT3G - onsemi

Manufacturer Part Number

MMUN2211LT3G

Manufacturer

onsemi

Introduction

Discrete Semiconductor Products

Transistors Bipolar (BJT) Single, Pre-Biased

Product Features and Performance

RoHS3 Compliant

SOT-23-3 (TO-236) package

Power rating: 246 mW

Collector-Emitter Breakdown Voltage (max): 50 V

Collector Current (max): 100 mA

Collector Cutoff Current (max): 500 nA

Collector-Emitter Saturation Voltage (max): 250 mV @ 300 μA, 10 mA

Transistor Type: NPN Pre-Biased

DC Current Gain (hFE) (min): 35 @ 5 mA, 10 V

Base Resistor (R1): 10 kOhms

Emitter-Base Resistor (R2): 10 kOhms

Surface Mount Mounting Type

Product Advantages

Pre-biased for simplified circuit design

High breakdown voltage

Low collector-emitter saturation voltage

Stable performance over temperature

Key Technical Parameters

Power rating: 246 mW

Collector-Emitter Breakdown Voltage: 50 V

Collector Current (max): 100 mA

Collector Cutoff Current (max): 500 nA

Collector-Emitter Saturation Voltage: 250 mV @ 300 μA, 10 mA

DC Current Gain (hFE) (min): 35 @ 5 mA, 10 V

Base Resistor (R1): 10 kOhms

Emitter-Base Resistor (R2): 10 kOhms

Quality and Safety Features

RoHS3 Compliant

Suitable for reflow soldering

Compatibility

Compatible with TO-236-3, SC-59, SOT-23-3 package footprints

Application Areas

Suitable for general-purpose amplification and switching applications

Product Lifecycle

Currently in production

Replacement and upgrade options available

Key Reasons to Choose This Product

Pre-biased for simplified circuit design

High breakdown voltage for increased reliability

Low collector-emitter saturation voltage for improved efficiency

Stable performance over temperature

Surface mount package for compact designs

RoHS3 compliant for environmental compatibility