MMUN2211LT1G - onsemi

Manufacturer Part Number

MMUN2211LT1G

Manufacturer

onsemi

Introduction

The MMUN2211LT1G is a pre-biased NPN bipolar junction transistor (BJT) in a SOT-23-3 (TO-236) package.

Product Features and Performance

Highly reliable and stable performance

Low power consumption

Excellent electrical characteristics

Wide breakdown voltage range

High current gain

Product Advantages

Compact and space-saving design

Easy to integrate into circuits

Suitable for a variety of applications

Robust and durable construction

Key Technical Parameters

Power rating: 246 mW

Collector-emitter breakdown voltage: 50 V

Collector current (max): 100 mA

Collector cutoff current (max): 500 nA

Collector-emitter saturation voltage: 250 mV @ 300 μA, 10 mA

DC current gain: 35 min @ 5 mA, 10 V

Base and emitter-base resistor values: 10 kΩ

Quality and Safety Features

RoHS3 compliant

Reliable and durable construction

Stringent quality control measures

Compatibility

Suitable for surface mount applications

Compatible with various electronic circuits and systems

Application Areas

Switching and amplifying circuits

Power management

Industrial control

Consumer electronics

Telecommunications equipment

Product Lifecycle

This product is currently in active production

Replacement or upgrade options may be available from onsemi

Key Reasons to Choose This Product

Excellent electrical performance and reliability

Compact and space-saving design

Easy integration into various electronic circuits

Compliance with RoHS3 standards

Robust and durable construction

Suitable for a wide range of applications