MMUN2132LT1G - onsemi

Manufacturer Part Number

MMUN2132LT1G

Manufacturer

onsemi

Introduction

Discrete Semiconductor Product

Bipolar Junction Transistor (BJT), Single, Pre-Biased

Product Features and Performance

Low power dissipation of 246 mW

High Collector-Emitter Breakdown Voltage of 50 V

High Collector Current of 100 mA

Low Collector Cutoff Current of 500 nA

Low Collector-Emitter Saturation Voltage of 250 mV

Integrated Base and Emitter Resistors of 4.7 kΩ each

Product Advantages

Compact SOT-23-3 (TO-236) surface mount package

Pre-biased for ease of use and reduced external components

Suitable for a variety of low-power amplifier and switching applications

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 50 V

Current Collector (Ic) (Max): 100 mA

Current Collector Cutoff (Max): 500 nA

Vce Saturation (Max) @ Ib, Ic: 250 mV @ 1 mA, 10 mA

DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5 mA, 10 V

Resistor Base (R1): 4.7 kΩ

Resistor Emitter Base (R2): 4.7 kΩ

Quality and Safety Features

RoHS3 Compliant

Compatibility

Surface Mount (SMT) assembly

Application Areas

Low-power amplifier and switching applications

Suitable for consumer electronics, industrial, and telecommunications equipment

Product Lifecycle

Actively available product

No plans for discontinuation

Several Key Reasons to Choose This Product

Compact and space-saving SOT-23-3 (TO-236) package

Integrated pre-biased design for simplified circuit implementation

High Collector-Emitter Breakdown Voltage and Collector Current capabilities

Low power dissipation and Collector-Emitter Saturation Voltage

Suitable for a wide range of low-power electronic applications